Forming semiconductor devices having ion implanted and diffused

Details Forming semiconductor devices having ion implanted and diffused Forming semiconductor devices having ion implanted and diffused

1977-12-30

1979-05-22

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 34, 357 43, 357 50, 357 91, H01L 21265, H01L 754

Patent

active

041557786

ABSTRACT:
A method for making ion implanted resistors in conjunction with transistors and other devices within an integrated circuit semiconductor substrate. The implantation of the resistors is done after a predeposition diffusion of the base region of the transistors but prior to the base drive-in step. The subsequent emitter thermal diffusion, or annealing step in the case of ion implanted emitters, consitutes the annealing step for the ion implanted resistor regions.

REFERENCES:
patent: 3892596 (1975-07-01), Bjorklund et al.
patent: 3925105 (1975-12-01), Sloan, Jr.
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4025364 (1977-05-01), Smith
patent: 4044371 (1977-08-01), Abdelrahman et al.
patent: 4045250 (1977-08-01), Dingwall
patent: 4053915 (1977-10-01), Cave
patent: 4082571 (1978-04-01), Graul et al.
Runge et al., ". . . Ion Implanted . . . Layers in Si" Appl. Phys. 10 (1976) 181.
Collins, "Effecting a High Collector Doping . . ." IMB-TDB, 10 (1967) 497.
Dearnaley et al., "Ion Implantation" North Holland, Amsterdam, 1973 pp. 454-456.

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