Fishing – trapping – and vermin destroying
Patent
1990-07-16
1991-04-30
Roy, Upendra
Fishing, trapping, and vermin destroying
357 91, 427 531, 437 21, 437171, C30B 3300, C30B 102, H01L 21263
Patent
active
050117831
ABSTRACT:
A method for producing a semiconductor device including the steps of forming an insulating layer on a substrate, the insulating layer having a plurality of concave portions, forming a non-single crystalline silicon layer on the surface of the insulating layer. The non-single crystalline silicon is patterned so that each concave portion is independently melted and the patterned non-single crystalline silicon layer flows into each of the concave portions to form a single crystalline region by irradiation with an energy ray; and, a semiconductor element is also formed in the single crystalline region.
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Kamioka Hajime
Kawamura Seiichiro
Ogawa Tsutomu
Sakurai Junji
Fujitsu Limited
Roy Upendra
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