Forming Schottky barrier diodes by depositing aluminum silicon a

Details Forming Schottky barrier diodes by depositing aluminum silicon a Forming Schottky barrier diodes by depositing aluminum silicon a

1981-04-30

1983-02-15

Roy, Upendra

Metal treatment

Compositions

Heat treating

29578, 29590, 148187, 357 67, 357 91, 427 84, 428620, 428641, H01L 700

Patent

active

043739660

ABSTRACT:
This describes four distinct methods of forming copper and silicon doped aluminum conductive structures on the surface of the semiconductor body which when sintered will form in conjunction with the exposed surface of the silicon body Schottky diodes which are resistant to internal field emission characteristics created by co-incidental copper-aluminum precipitates and aluminum doped solid phase epitaxial growths.

REFERENCES:
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patent: 3871067 (1975-03-01), Bogardus et al.
patent: 3881971 (1975-05-01), Greer et al.
patent: 4199386 (1980-04-01), Rosnowski et al.
Learn, A. J., Jour. Electronics Materials, 3, (1974), 531.
Brack et al., IBM-TDB, 19, (1976), 2592.
Harris et al., Jour. Appl. Phys., 48, (1977), 2897.
Nowick et al., Thin Solid Films, 67, (1980), 385.

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