Forming retrograde twin wells by outdiffusion of impurity ions i

Details Forming retrograde twin wells by outdiffusion of impurity ions i Forming retrograde twin wells by outdiffusion of impurity ions i

1987-05-29

1988-08-02

Roy, Upendra

Fishing, trapping, and vermin destroying

357 42, 357 91, 437 31, 437 34, 437 56, 437 97, 437 98, 148DIG82, H01L 21265

Patent

active

047613840

ABSTRACT:
A method for the manufacture of LSI complementary MOS field effect transistor circuits to increase the latch-up hardness of the n-channel and p-channel field effect transistors while retaining good transistor properties by incorporating a further epitaxial layer and highly doped implantation regions into a lower epitaxial layer from which the wells are generated by out-diffusion into the upper epitaxial layer. In addition to achieving optimum transistor properties, the reduced lateral diffusion provided enables a lower n.sup.+ /p.sup.+ spacing, and thus achieves a higher packing density with improved latch-up hardness.

REFERENCES:
patent: 4128439 (1978-12-01), Jambotkar
patent: 4168997 (1979-09-01), Compton
patent: 4379726 (1983-04-01), Kumamaru et al.
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4466171 (1984-08-01), Jochems
patent: 4529456 (1985-07-01), Anzai et al.
patent: 4536945 (1985-08-01), Gray et al.
Rung et al, IEEE Trans. Electron Devices, ED-28 (1981) 1115.

Affiliated with

Also associated with

Rating

Forming retrograde twin wells by outdiffusion of impurity ions i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming retrograde twin wells by outdiffusion of impurity ions i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming retrograde twin wells by outdiffusion of impurity ions i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-711765