Forming platinum contacts to in-based group III-V compound devic

Details Forming platinum contacts to in-based group III-V compound devic Forming platinum contacts to in-based group III-V compound devic

1984-06-15

1985-09-03

Hearn, Brian E.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29589, 357 67, 427 42, 427 91, H01L 21285

Patent

active

045383421

ABSTRACT:
Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e.g., p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450.degree.-525.degree. C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.

REFERENCES:
patent: 4287527 (1981-09-01), Bachmann et al.
patent: 4359485 (1982-11-01), Donnelly et al.
patent: 4414561 (1983-11-01), Keramidas et al.
"The Migration of Gold from the p-Contact as a Source of Dark Spot Defects in InP/InGaAsP LED's", IEEE Transactions On Elec. Devices, vol. 30, No. 4, pp. 304-310, Apr. 1983, A. K. Chin et al.
"Metallization for Diode Lasers", J. of Vacuum Sciences and Technology", vol. 19, No. 3, Sep./Oct. 1981, pp. 799-802, M. Ettenberg et al.
"InGaAsP/InP D.H. L.E.D.S. For Fibre-Optical Communications", Electronics Letters, vol. 14, No. 16, Aug. 1978, pp. 499-500, I. Umebu, et al.
"TEM Observations of Laser-Induced Pt and Au Deposition on InP", J. of Electrochemical Society, vol. 130, No. 7, Jul. 1983, pp. 1473-1475, D. Brasen et al.
"Interfacial Reaction and Schottky Barrier Between Pt and GaAs", J. Applied Physics, vol. 54, No. 3, Mar. 1983, pp. 1404-1412, C. Fontaine et al.
"Reliability of High Radiance InGaAsP/InP LED's Operating in the 1.2-1.3 .mu.m Wavelength", IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 167-173, S. Yamakoshi et al.

Affiliated with

Also associated with

Rating

Forming platinum contacts to in-based group III-V compound devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming platinum contacts to in-based group III-V compound devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming platinum contacts to in-based group III-V compound devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-606747