Forming planar ITO gate electrode array structures

Fishing – trapping – and vermin destroying

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437 50, 437 69, 437181, 437968, 148DIG106, H01L 21302

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active

051148722

ABSTRACT:
A method of forming a planar ITO gate electrode structure with sub-micron spacing includes forming L-shaped nitride spacer portions.

REFERENCES:
patent: 4812418 (1989-03-01), Pfiester et al.
patent: 4878993 (1989-11-01), Rossi et al.
patent: 4986879 (1991-01-01), Lee

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