Forming phase change memory cells

Details Forming phase change memory cells Forming phase change memory cells

2011-07-05

2011-07-05

Ghyka, Alexander G (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE47001

Reexamination Certificate

active

07973302

ABSTRACT:
Small phase change memory cells may be formed by forming a segmented heater over a substrate. A stop layer may be formed over the heater layer and segmented with the heater layer. Then, sidewall spacers may be formed over the segmented heater to define an aperture between the sidewall spacers that may act as a mask for etching the stop layer over the segmented heater. As a result of the etching using the sidewall spacers as a mask, sublithographic pore may be formed over the heater. Phase change material may be formed within the pore.

REFERENCES:
patent: 7422926 (2008-09-01), Pellizzer et al.
patent: 2006/0226409 (2006-10-01), Burr et al.
patent: 2006/0257787 (2006-11-01), Kuo et al.
patent: 2007/0020797 (2007-01-01), Pellizzer et al.
patent: 2007/0279974 (2007-12-01), Dennison et al.

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