Forming phase change memory arrays

Details Forming phase change memory arrays Forming phase change memory arrays

2007-08-21

2007-08-21

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S095000, C438S947000, C257SE31029

Reexamination Certificate

active

10939145

ABSTRACT:
A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.

REFERENCES:
patent: 4648937 (1987-03-01), Ogura et al.
patent: 6413812 (2002-07-01), Harshfield
patent: 2003/0186481 (2003-10-01), Lung
patent: 2005/0112896 (2005-05-01), Hamann et al.

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