Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-12-30
2011-10-04
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C438S131000, C438S385000, C257S030000, C257SE21592
Reexamination Certificate
active
08030734
ABSTRACT:
A phase change memory cell may be formed with a pair of chalcogenide phase change layers that are separated by a breakdown layer. The breakdown layer may be broken down prior to use of the memory so that a conductive breakdown point is defined within the breakdown layer. In some cases, the breakdown point may be well isolated from the surrounding atmosphere, reducing heat losses and decreasing current consumption. In addition, in some cases, the breakdown point may be well isolated from overlying and underlying electrodes, reducing issues related to contamination. The breakdown point may be placed between a pair of chalcogenide layers with the electrodes outbound of the two chalcogenide layers.
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Dennison Charles H.
Gordon George A.
Peters John
Jorgenson Lisa K.
Ngo Ngan
Seed IP Law Group PLLC
Stevens Hayley J.
STMicroelectronics S.r.l.
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