Forming phase change memories

Details Forming phase change memories Forming phase change memories

2007-03-27

2007-03-27

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S613000, C257S296000, C257SE23007, C257S165000, C257SE51008, C257S038000

Reexamination Certificate

active

11013036

ABSTRACT:
Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

REFERENCES:
patent: 6300684 (2001-10-01), Gonzalez et al.
patent: 6534781 (2003-03-01), Dennison
patent: 6545287 (2003-04-01), Chiang
patent: 6566700 (2003-05-01), Xu
patent: 6764894 (2004-07-01), Lowrey

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