Forming oxide buffer layer for improved magnetic tunnel...

Details Forming oxide buffer layer for improved magnetic tunnel... Forming oxide buffer layer for improved magnetic tunnel...

2007-09-04

2007-09-04

Bashore, Alain L. (Department: 1762)

Coating processes

Magnetic base or coating

Magnetic coating

C427S130000, C427S131000, C428S692100, C360S324100

Reexamination Certificate

active

10878569

ABSTRACT:
A metal manganese oxide buffer layer is used to seed a barrier layer in a magnetic tunnel junction memory element having pinned and free magnetic layers. An alumina tunnel barrier layer is formed on the oxidized metal manganese layer with the barrier layer and oxidized metal manganese layer being between the pinned or free ferromagnetic layers.

REFERENCES:
patent: 6638774 (2003-10-01), Raberg
patent: 2002/0051848 (2002-05-01), Li
patent: 2002/0054461 (2002-05-01), Fujiwara et al.
patent: 2004/0042246 (2004-03-01), Drewes et al.
patent: 2005/0041335 (2005-02-01), Kikitsu et al.

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