Forming of close thin trenches

Details Forming of close thin trenches Forming of close thin trenches

2005-12-06

2005-12-06

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S700000

Reexamination Certificate

active

06972240

ABSTRACT:
A method for forming narrow trenches in a silicon substrate, comprising the steps of: etching the substrate to form first trenches separated by first silicon ribs; performing a thermal oxidation of the substrate to form a silicon oxide layer around the substrate, to obtain second trenches and second silicon ribs; filling the second trenches with fingers of an etchable material; etching the oxide down to the upper surface of the second ribs while keeping oxide portions between said material fingers and the second ribs; etching away the second silicon ribs and said material fingers; etching the oxide to expose the substrate at the bottom of the oxide portions, while keeping oxide fingers; and etching the substrate between the oxide fingers to form narrow trenches in the substrate.

REFERENCES:
patent: 4650544 (1987-03-01), Erb et al.
patent: 5793077 (1998-08-01), Tseng
patent: 6175144 (2001-01-01), Gardener et al.
patent: 6211039 (2001-04-01), Noble
patent: 6316309 (2001-11-01), Holmes
patent: 2002/0052092 (2002-05-01), Lachner

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