Forming multi-layered interconnections with fluorine compound tr

Details Forming multi-layered interconnections with fluorine compound tr Forming multi-layered interconnections with fluorine compound tr

1993-04-14

1995-05-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 437228, H01L 2144

Patent

active

054200750

ABSTRACT:
A method of manufacturing a semiconductor device, incorporates the steps of: performing reactive ion etching using a fluorine compound gas to surface-treat the lower level wirings which permits selective deposition of the second silicon oxide film; selectively depositing a second silicon oxide film between said lower level wirings by a CVD method using an organic silicon compound gas and an oxidizable gas as source gases; depositing a third silicon oxide film on an entire surface and forming through holes connected to the lower wirings; and forming upper level wirings connected to the lower level wirings. Further, an additional silicon oxide film can be deposited on the major surface so as to form a side wall thereof on the lower level wirings. The reactive ion etching is then performed.

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