Forming monolithic planar opto-isolators by selective implantati

Details Forming monolithic planar opto-isolators by selective implantati Forming monolithic planar opto-isolators by selective implantati

1986-03-07

1987-07-07

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29569L, 148 15, 148175, 148187, H01L 21265, H01L 754

Patent

active

046777407

ABSTRACT:
Disclosed are novel opto-isolator devices and processes for fabricating same wherein suitable semiconductive substrates, such as galium arsenide wafers, are treated with conductivity type determining impurities in such a manner as to form radiation emitters, radiation detectors and interconnecting waveguides therein. These operative regions which form a monolithic opto-isolator have the necessary electro-optical characteristics for generating and coupling radiation from the emitter and through the waveguide coupler to the detector; and all of these regions may be integrally fabricated in a monolithic batch fabrication process. Such process may use, for example, particle implantation and masking steps, thereby ensuring high yield and low cost device fabrication.

REFERENCES:
American Institute of Physics Handbook, 2nd edition, McGraw-Hill, 1963, pp. 5-42.

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