Forming method of liquid crystal layer using ink jet system

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

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Details

C349S042000, C349S043000, C349S139000, C349S143000

Reexamination Certificate

active

07548284

ABSTRACT:
According to an embodiment, a fabrication method includes forming a gate line disposed along a first direction and a common line parallel to the gate line on a substrate, the gate and common lines spaced apart from each other, forming a gate insulating layer on the gate and common lines, forming a semiconductor layer on the gate insulating layer, forming a source electrode and a pixel electrode of transparent conductive material, the pixel electrode including a drain electrode portion, the drain electrode portion overlapping the semiconductor layer, forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively, and forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line.

REFERENCES:
patent: 5668650 (1997-09-01), Mori et al.
patent: 5726461 (1998-03-01), Shimada et al.
patent: 5757450 (1998-05-01), Fujii et al.
patent: 5835177 (1998-11-01), Dohjo et al.
patent: 5870157 (1999-02-01), Shimada et al.
patent: 5880797 (1999-03-01), Yamada et al.
patent: 5886761 (1999-03-01), Sasaki et al.
patent: 5946060 (1999-08-01), Nishiki et al.
patent: 6226061 (2001-05-01), Tagusa et al.
patent: 6310669 (2001-10-01), Kobayashi et al.
patent: 6323051 (2001-11-01), Shimada et al.
patent: 6449024 (2002-09-01), Hirakata et al.
patent: 6509939 (2003-01-01), Lee et al.
patent: 6573955 (2003-06-01), Murade et al.
patent: 6583841 (2003-06-01), Youn et al.
patent: 07-094753 (1995-04-01), None
patent: 08-087034 (1996-04-01), None

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