Forming method of gallium nitride system compound...

Details Forming method of gallium nitride system compound... Forming method of gallium nitride system compound...

2009-11-03

2011-11-08

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S421000, C438S455000, C438S458000, C438S460000, C438S462000, C438S481000, C438S690000, C257S084000, C257S088000, C257S288000, C257S565000, C257SE21211, C257SE21409, C257SE21482, C257SE33001

Reexamination Certificate

active

08053335

ABSTRACT:
A method includes forming a first layer containing silicon oxide on a first substrate, partially removing the first layer to form an exposure portion on the first substrate, depositing amorphous gallium nitride system compound semiconductor on the first substrate with the exposure portion, evaporating the semiconductor on the first layer to form cores of the semiconductor on the exposure portion of the first substrate, forming an epitaxial layer of the semiconductor on the first substrate, and removing the epitaxial layer of the semiconductor on the exposure portion on the first substrate to form a separating groove.

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