Forming method of contact hole and manufacturing method of...

Details Forming method of contact hole and manufacturing method of... Forming method of contact hole and manufacturing method of...

2009-02-10

2010-02-02

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S637000, C438S672000

Reexamination Certificate

active

07655499

ABSTRACT:
When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.

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