Forming magnesium-doped Group III-V semiconductor layers by liqu

Details Forming magnesium-doped Group III-V semiconductor layers by liqu Forming magnesium-doped Group III-V semiconductor layers by liqu

1985-09-30

1986-12-16

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29569L, H01L 21208

Patent

active

046295194

ABSTRACT:
A method of manufacturing a semiconductor device, in which an epitaxial layer doped with magnesium compounds of elements from the groups III and V of the periodic system of elements is deposited on a surface of a semiconductor body. For this purpose, the semiconductor body is brought into contact with a saturated solution of the compound, in which magnesium is present. Magnesium is added to the solution in the form of magnesium silicide, magnesium germanide or magnesium stannide. Thus, the epitaxial layer can be doped in a very reproducible manner, while moreover defects in the layer due to magnesium oxide particles are prevented.

REFERENCES:
patent: 3530015 (1970-09-01), Antell
patent: 3617820 (1971-11-01), Herzog
patent: 3940296 (1976-02-01), van Oirschot et al.
patent: 4051061 (1977-09-01), Bhargara et al.
patent: 4052252 (1977-10-01), Lockwood et al.
patent: 4126930 (1978-11-01), Moon
patent: 4400221 (1983-08-01), Rahilly

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