Forming low-resistance contact to silicon

Details Forming low-resistance contact to silicon Forming low-resistance contact to silicon

1983-08-31

1985-03-05

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 427 88, 148 15, 357 67, 357 71, H01L 2348

Patent

active

045022097

ABSTRACT:
Annealing a titanium-rich carbide film deposited on silicon produces, in a single processing step, both a stable titanium silicide contact and a titanium carbide diffusion barrier between the silicide and a subsequently formed overlying layer of aluminum. Reliable low-resistance contacts to VLSI devices are thereby provided in a cost-effective fabrication sequence.
Other metallization systems, comprising a silicide and a diffusion barrier to aluminum formed in a single processing step, are also described.

REFERENCES:
patent: 3714520 (1973-01-01), Engeler et al.
patent: 3794516 (1974-02-01), Engeler et al.
patent: 3879746 (1975-04-01), Fournier
"Interaction of Reactively Sputtered Titanium Carbide Thin Films with Si, SiO.sub.2 Ti, TiSi.sub.2, and Al", J. Appl. Phys., 54(6), Jun. 1983, M. Eizenberg et al, pp. 3195-3199.

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