Metal treatment – Compositions – Heat treating
Patent
1977-10-26
1979-01-30
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 148188, 219121L, 357 91, 427 53, B23K 2700, H01L 21268
Patent
active
041371003
ABSTRACT:
An array of blind holes are formed in a silicon wafer with a laser and a dopant deposited therein. The wafer is then placed in a furnace for a time and at a temperature sufficient to drive the dopant into the wafer to a predetermined depth.
Alternatively, the material may be applied to the wafer prior to the drilling of the blind holes and the dopant driven into the wafer as the holes are being formed.
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Kutukova et al., "Laser Annealing of Implanted Si" Sov. Phys. Semicond., vol. 10, (Mar. 1976), 265 (Eng.).
Josh et al., "Induced Impurity . . . in S/C by Lasers", IBM-TDB, vol. 11, (1968) 104.
Hutchins, "Localized . . . Diffusions . . . Laser . . . ", IBM-TDB, 16 (1974) 2585.
Bogatyrev et al., "Imp.sup.n, PN-junctions . . . Laser Pulse Heating", Sov. Phys. Semicond., vol. 10, (Jul. 1976) 826.
Kirk D. J.
Roy Upendra
Rutledge L. Dewayne
Western Electric Company
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