Forming interconnects using locally deposited solvents

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S082000, C438S099000, C438S149000, C438S161000, C438S623000, C438S780000, C438S781000, C438S789000, C438S790000, C438S793000, C438S794000

Reexamination Certificate

active

07098061

ABSTRACT:
A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing solvents at a localised region of the insulating layer so as to dissolve the sequence of insulating and semiconducting layers in the region to leave a void extending through the sequence of layer; and depositing conductive or semiconductive material in the void.

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