Forming inductor and transformer structures with magnetic...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S171000, C438S210000, C438S328000, C438S728000, C438S732000, C257SE21220, C257SE21507, C257SE21665

Reexamination Certificate

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07867787

ABSTRACT:
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.

REFERENCES:
patent: 6331479 (2001-12-01), Li
patent: 6534374 (2003-03-01), Johnson
patent: 6940147 (2005-09-01), Crawford et al.
patent: 7129561 (2006-10-01), Coolbaugh
patent: 7247544 (2007-07-01), Drizlikh
patent: 2004/0191981 (2004-09-01), Yates et al.
International Preliminary Report on Patentability received for PCT Patent Application No. PCT/US2008/085265, mailed on Jul. 15, 2010, 9 pages.
International Search Report for PCT Application No. PCT/US2008/085265, mailed on Jun. 1, 2009, 2 Pages.

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