Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-01-11
2011-01-11
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S171000, C438S210000, C438S328000, C438S728000, C438S732000, C257SE21220, C257SE21507, C257SE21665
Reexamination Certificate
active
07867787
ABSTRACT:
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.
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Gardner Donald S.
Hazucha Peter
Karnik Tanay
Paillet Fabrice
Schrom Gerhard
Ahmadi Mohsen
Intel Corporation
Mulpuri Savitri
Ortiz Kathy J.
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