Forming fine pattern of semiconductor device using three...

Details Forming fine pattern of semiconductor device using three... Forming fine pattern of semiconductor device using three...

2007-12-27

2009-11-10

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S671000, C438S694000, C438S737000, C438S738000, C438S761000, C438S952000, C438S096000, C257S629000, C257SE21215, C257SE29022

Reexamination Certificate

active

07615497

ABSTRACT:
A method for forming a fine pattern of a semiconductor device includes forming a deposition film over a substrate having an underlying layer. The deposition film includes first, second, and third mask films. The method also includes forming a photoresist pattern over the third mask film, patterning the third mask film to form a deposition pattern, and forming an amorphous carbon pattern at sidewalls of the deposition pattern. The method further includes filling a spin-on-carbon layer over the deposition pattern and the amorphous carbon pattern, polishing the spin-on-carbon layer, the amorphous carbon pattern, and the photoresist pattern to expose the third mask pattern, and performing an etching process to expose the first mask film with the amorphous carbon pattern as an etching mask. The etching process removes the third mask pattern and the exposed second mask pattern. The method also includes removing the spin-on-carbon layer and the amorphous carbon pattern, and forming a first mask pattern with the second mask pattern as an etching mask.

REFERENCES:
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patent: 7531456 (2009-05-01), Kwon et al.
patent: 1998021248 (1998-06-01), None
Yao, “Dry Etching Trends in Flat Panel Display Processing,” IEEE 1997 International Conference on Plasma Science, IEEE Conference Record—Abstracts, pp. 314-315 (May 19-22, 1997) (ISBN: 0-7803- 3990-8).

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