Forming films on semiconductor surfaces with metal-silica soluti

Details Forming films on semiconductor surfaces with metal-silica soluti Forming films on semiconductor surfaces with metal-silica soluti

1976-11-15

1978-11-21

Kendall, Ralph S.

Coating processes

Electrical product produced

Condenser or capacitor

427 95, 427125, 427229, H01L 21283

Patent

active

041267133

ABSTRACT:
An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having a metal salt and a cross-linking agent dissolved therein and a second solution having an organo-silicate dissolved therein, and aging the mixture a predetermined length of time. This mixture can then be applied to the semiconductor surface where cross-linking takes place such that a viable film is formed. Further heating of the semi-conductor device causes a metal film to be formed which is in turn diffused into the semiconductor device. By the use of the metal-silica solution, an improved method for diffusing metal atoms into silicon for lifetime control is achieved.

REFERENCES:
patent: 3067485 (1962-12-01), Ciccolella
patent: 3186084 (1965-06-01), Betteridge et al.
patent: 3535146 (1970-10-01), Flicker

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