Forming ferroelectric polymer memories

Details Forming ferroelectric polymer memories Forming ferroelectric polymer memories

2002-05-31

2010-06-01

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S238000, C438S250000, C438S393000, C257SE27104

Reexamination Certificate

active

07727777

ABSTRACT:
In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.

REFERENCES:
patent: 4939568 (1990-07-01), Kato et al.
patent: 5277757 (1994-01-01), Sato
patent: 5843516 (1998-12-01), Derbenwick et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6232212 (2001-05-01), Degani et al.
patent: 6344400 (2002-02-01), Yutani
patent: 6420190 (2002-07-01), Shimoda et al.
patent: 6429089 (2002-08-01), Matsuki
patent: 6436838 (2002-08-01), Ying et al.
patent: 6541869 (2003-04-01), Gudesen et al.
patent: 6593058 (2003-07-01), Feiring et al.
patent: 6798003 (2004-09-01), Li et al.
patent: 2002/0008079 (2002-01-01), Chung
patent: 2002/0036934 (2002-03-01), Hasegawa et al.
patent: 2002/0044480 (2002-04-01), Gudesen et al.
patent: 2003/0017627 (2003-01-01), Li et al.
patent: 2003/0076649 (2003-04-01), Speakman
patent: 2003/0218896 (2003-11-01), Pon et al.
patent: 63-293729 (1988-11-01), None
patent: 63293729 (1988-11-01), None
patent: 10-22470 (1998-01-01), None
patent: 10-022470 (1998-01-01), None
patent: 10022470 (1998-01-01), None
1989-018689, an english abstract of Jp 63-293729, ferroelectric polymer memory by Derwent Information Ltd, 1989.
JP410022470-A, an english abstract, 1998.

Affiliated with

Also associated with

Rating

Forming ferroelectric polymer memories does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming ferroelectric polymer memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming ferroelectric polymer memories will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4175994