Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-03-23
2009-11-10
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S288000
Reexamination Certificate
active
07615779
ABSTRACT:
In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described.
REFERENCES:
patent: 7521710 (2009-04-01), Nakamura et al.
patent: 2005/0056828 (2005-03-01), Wada et al.
patent: 2005/0101063 (2005-05-01), Tour et al.
C. P. Collier C P, et al., “Catenane-Based Solid State Electronically Reconfigurable Switch,”Sciencevol. 289, p. 1172 (2000).
J. Chen, et al., “Large on-off ratios and negative differential resistance in a molecular electronic device,”Sciencevol. 286, p. 1550 (1999).
Y. Chen, et al., “Nanoscale molecular-switch crossbar circuits,”Nanotechnologyvol. 14, p. 462 (2003).
W. Wang et al., “Electronic Transport in Molecular Self-Assembled Monolayer Devices,”Proc. IEEE, vol. 93, No. 10, p. 1815 (2005).
M. D. Austin, et al., “Fabrication of a molecular self-assembled monolayer diode using nanoimprint lithography,”Nano Lett.vol. 3, p. 1687 (2003).
C. N. Lau, et al., “Direct observation of nanoscale switching centers in metal/molecule/metal structures,”Nano Lett.vol. 4, p. 569 (2004).
G. Philipp, et al., “Gold cluster formation at the interface of a gold/Langmuir-Blodgett film/gold microsandwich resulting in Coulomb charging phenomena,”J. Appl. Phys.vol. 85, p. 3374 (1999).
K. A. Son, et al., “Role of Stress on Charge Transfer through Self-Assembled Alkanethiol Monolayers on Au,”Phys. Rev. Lett.vol. 83, p. 5357 (2001).
T. Ohgi et aL, “Charging effects in gold nanoclusters grown on octanedithiol layers,”Appl. Phys. Lett.vol. 79, p. 2453 (2001).
T. Ohgi T, et al., “Scanning tunneling microscopy and X-ray photoelectron spectroscopy of silver deposited octanethiol self-assembled monolayers,”Surf. Sci.vol. 493, p. 453 (2001).
B. D. Boer, et al., “Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols,”Langmuirvol. 20, p. 1539 (2004).
A. V. Walker, et al., “Interaction of vapor-deposited Ti and Au with molecular wires,”Appl. Phys. Lett.vol. 84, p. 4008 (2004).
T. A. Fulton, et al., “Observation of single-electron charging effects in small tunnel junctions,”Phys. Rev. Lett.vol. 59, p. 109 (1987).
C. R. Kagan, et al., “Evaluations and Considerations for Self-Assembled Monolayer Field-Effect Transistors,”Nano Lett.vol. 3, p. 119 (2003).
J. O. Lee, et al., “Absence of strong gate effects in electrical measurements on phenylene-based conjugated molecules,”Nano Lett.vol. 3, p. 113 (2003).
N. B. Zhitenev, et al., “Conductance of small molecular junctions,”Phys. Rev. Lett.vol. 88, p. 226801 (2002).
B. D. Boer, et al., “Synthesis and characterization of conjugated mono- and dithiol oligomers and characterization of their self-assembled monolayers,”Langmuirvol. 19, p. 4272 (2003).
W. R. Jiang, et al., “Structure and bonding issues at the interface between gold and self-assembled conjugated dithiol monolayers,”Langmiurvol. 21, p. 8751 (2005).
N. B. Zhitenev, et al., “Single- and Multigrain Nanojunctions with a Self-Assembled Monolayer of Conjugated Molecules,”Phys. Rev. Lett.vol. 92, p. 186805 (2004).
N. B. Zhitenev, et al., “Molecular nano-junctions formed with different metallic electrodes,”Nanotechnologyvol. 16, p. 495 (2005).
A. Salomon, et al., “Comparison of electronic transport measurements on organic molecules,”Adv. Mater.vol. 15, p. 1881 (2003).
C. Kergueris, et al., “Electron transport through a metal-molecule-metal junction,”Phys. Rev. Bvol. 59, p. 12505 (1999).
J. Heurich et al., “Electrical transport through single-molecule junctions: From molecular orbitals to conduction channels,”Phys. Rev. Lett.vol. 88, p. 256803 (2002).
J. K. Tomfohr, et al., “Complex band structure, decay lengths, and Fermi level alignment in simple molecular electronic systems,”Phys. Rev. Bvol. 65, p. 245105 (2002).
E. Cimpoiasu, et al., “Aluminum oxide layers as possible components for layered tunnel barriers,”J. Appl. Phys.vol. 96, p. 1088 (2004).
M. Stadele, et al., Enhancement of the effective tunnel mass in ultrathin silicon dioxide layersJ. Appl. Phys.vol. 93, p. 2681 (2003).
C. Joachim, et al., “The effective mass of an electron when tunneling through a molecular wire,”Chem. Phys.vol. 281, p. 347 (2002).
N. B. Zhitenev et al., “Control of topography, stress and diffusion at molecule-metal interface,”Nanotechnology,vol. 17, p. 1272 (2006).
Alcatel-Lucent USA Inc.
Nguyen Cuong Q
Urbano Michael J.
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