Forming electrical contacts to a molecular layer

Details Forming electrical contacts to a molecular layer Forming electrical contacts to a molecular layer

2007-06-12

2007-06-12

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S149000, C438S738000, C438S151000, C438S048000, C438S578000, C257SE51040, C257SE51005, C257SE51046

Reexamination Certificate

active

10307642

ABSTRACT:
The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.

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