Forming electrical conductors in long microdiameter holes

Electric heating – Metal heating – For deposition welding

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118620, 427 37, B23K 2800

Patent

active

046281746

ABSTRACT:
A conductor is provided through a narrow bore hole of a wafer. The hole has a length-to-diameter ratio in excess of six. The conductor is formed by condensation of metal vapor generated at the bottom of said hole by a spark. The spark is generated between a vaporizable metal at the bottom of the hole and a thin electrode disposed above the hole from a conventional automobile coil and battery operating through a mercury switch.

REFERENCES:
patent: 3562009 (1971-02-01), Cranston et al.
patent: 4505948 (1985-03-01), Pinkhasov
"Forming Electrical Interconnections Through Semiconductor Wafers" by T. R. Anthony, J. Appl. Physics, 52(8), 5340 (1981).
"Forming Feedthroughs in Laser-Drilled Holes in Semiconductor Wafers by Double-Sided Sputtering": by T. R. Anthony, IEEE Trans. CHMT-5(1), 1971 (1982).
"Diodes Formed by Laser Drilling and Diffusion" by T. R. Anthony, J. Appl. Phys., 53(12), 9154 (1982).

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