Forming disordered layer by controlled diffusion in heterojuncti

Details Forming disordered layer by controlled diffusion in heterojuncti Forming disordered layer by controlled diffusion in heterojuncti

1984-08-31

1987-01-27

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 29576T, 148175, 148187, 148DIG84, 357 61, 357 91, 372 46, H01L 21263, H01L 21265

Patent

active

046392750

ABSTRACT:
A method is disclosed for converting a multilayer semiconductor structure, that includes active semiconductor regions interposed between semiconductor barrier layers, into a disordered alloy by introduction of a specified disordering element into the multilayer structure. Devices made using the method are also disclosed.

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