Forming deep buried grids of implanted zones being vertically an

Details Forming deep buried grids of implanted zones being vertically an Forming deep buried grids of implanted zones being vertically an

1985-02-07

1987-05-12

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148175, 148187, 148DIG10, 357 34, 357 38, 357 91, H01L 21265

Patent

active

046638300

ABSTRACT:
A buried grid structure is produced in a semiconductor material particularly a silicon wafer, while using a metallic grid mask. The buried grid is formed directly within the semiconductor material by contradoping ion implantation by means of a high energy accelerator through the metallic grid mask. The bars or ribs of the metallic grid mask stop the ions passing therethrough so that two vertically separated and laterally offset buried grid structures are produced. By beveling the periphery of the wafer, buried conductive structures are formed at the same time as connections between the buried grid structures and a control electrode provided on the back side of the wafer.

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"Electronic Letter" (Sep. 16, 1976) vol. 12 #19 pp. 486 487 by Barandon et al.
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Proc. IEEE, Dec. 1964 "Gridistor-The New Field by Teszner et al.

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