Forming controlled inset regions by ion implantation and laser b

Details Forming controlled inset regions by ion implantation and laser b Forming controlled inset regions by ion implantation and laser b

1978-01-18

1981-01-06

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

219121L, 357 20, 357 34, 357 91, H01L 2126

Patent

active

042434335

ABSTRACT:
A semiconductor integrated circuit structure in which the inset regions are ion implanted and laser annealed to maintain substantially the dimensions of the implantation and the method of forming inset implanted regions having controlled dimensions.

REFERENCES:
patent: 3925106 (1975-12-01), Ku et al.
patent: 4059461 (1977-11-01), Fan et al.
Kutukova et al., "Laser . . . Implanted Si" Sov. Phys. Semicond. 10 (1976) 265.
Shtyrkov et al., "Local Laser Annealing . . . Layers" Sov. Phys. Semicond. 9 (1976) 1309.
Antonenko et al., ". . . Impurity in Si . . . Laser Annealing" Sov. Phys. Semicond., 10 (1976) 81.
Bogatyrev et al., ". . . P-N Junctions . . . Laser Pulse . . . " Sov. Phys. Semicond. 10 (1976) 826.
Klimenko et al., ". . . Laser . . . Ion-Impln-Amorphized Si . . . " Sov. J. Quant. Electron., 5 (1976) 1289.
Kachurin et al., "Annealing . . . Laser . . . Pulses" Sov. Phys. Semicond., 9 (1976) 946.
Bhatia et al., "Isolation Process . . . " IBM-TDB, 19 (1977) 4171.
Poponiak et al., ". . . Implant Damage . . . Epi-Layer" IBM-TDB, 19 (1976) 2052.
Young et al., "Laser Annealing . . . Si" Appl. Phys. Letts. 32(3), 1978, 139.
Joshi et al., ". . . Impurity . . . S/C by Lasers" IBM-TDB, 11 (1968) 104.
Joshi et al., "Masking . . . for Laser Induced Diffusion" IBM-TDB, 13 (1970) 928.

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