Forming contacts on semiconductor substrates radiation detectors

Details Forming contacts on semiconductor substrates radiation detectors Forming contacts on semiconductor substrates radiation detectors

1996-11-26

2000-04-04

Wilczewski, Mary

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 84, 438 98, 438102, 438930, 438958, H01L 2128, H01L 2714

Patent

active

060460687

ABSTRACT:
A method, suitable for forming metal contacts on a semiconductor substrate at positions for defining radiation detector cells, includes the steps of forming one or more layers of material on a surface of the substrate with openings to the substrate surface at the contact positions; forming a layer of metal over the layer(s) of material and the openings; and removing metal overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer to be left between individual contacts on the substrate surface may be applied. Etchants used for removing unwanted gold (or other contact matter) are preferably prevented from coming into contact with the surface of the substrate, thereby avoiding degradation of the resistive properties of the substrate.

REFERENCES:
patent: 4670097 (1987-06-01), Abdalla et al.
patent: 4677740 (1987-07-01), Shifrin et al.
patent: 5057439 (1991-10-01), Swanson et al.
patent: 5296407 (1994-03-01), Eguchi
Patent Abstracts of Japan, vol. 9, No. 115, May 18, 1985 & JP-1-60-004214 (Toshiba KK), Jan. 10, 1985.
Patent Abstracts of Japan, vol. 12, No. 457, Nov. 30, 1988 & JP-A-63-181481 (Matsushita Electric Ind Co Ltd) Jul. 26, 1988.
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Patent Abstracts of Japan, vol. 5, No. 74, May 16, 1981 & JP-A-56 023783 (Matsushita Electronics Corp) Mar. 6, 1981.
Patents Abstracts of Japan, vol. 11, No. 204, Jul. 2, 1987 & JP-A-62 026812 (Mitsubishi Electric Corp) Feb. 4, 1987.

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