Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2011-04-19
2011-04-19
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C438S381000, C438S396000, C438S393000, C438S253000, C438S239000, C438S240000, C438S626000, C257S758000, C257SE21495
Reexamination Certificate
active
07927990
ABSTRACT:
A method is provided to form densely spaced metal lines. A first set of metal lines is formed by etching a first metal layer. A thin dielectric layer is conformally deposited on the first metal lines. A second metal is deposited on the thin dielectric layer, filling gaps between the first metal lines. The second metal layer is planarized to form second metal lines interposed between the first metal lines, coexposing the thin dielectric layer and the second metal layer at a substantially planar surface. In some embodiments, planarization continues to remove the thin dielectric covering tops of the first metal lines, coexposing the first metal lines and the second metal lines, separated by the thin dielectric layer, at a substantially planar surface.
REFERENCES:
patent: 5204288 (1993-04-01), Marks et al.
patent: 5534731 (1996-07-01), Cheung
patent: 5679606 (1997-10-01), Wang et al.
patent: 5753564 (1998-05-01), Fukada
patent: 5856707 (1999-01-01), Sardella
patent: 5889328 (1999-03-01), Joshi et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5940702 (1999-08-01), Sakao
patent: 6083821 (2000-07-01), Reinberg
patent: 6093599 (2000-07-01), Lee et al.
patent: 6093634 (2000-07-01), Chen et al.
patent: 6096654 (2000-08-01), Kirchhoff et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6153512 (2000-11-01), Chang et al.
patent: 6153543 (2000-11-01), Chesire et al.
patent: 6211040 (2001-04-01), Liu et al.
patent: 6211569 (2001-04-01), Lou
patent: 6218306 (2001-04-01), Fishkin et al.
patent: 6239024 (2001-05-01), Huang et al.
patent: 6251740 (2001-06-01), Johnson et al.
patent: 6261893 (2001-07-01), Chang et al.
patent: 6268274 (2001-07-01), Wang et al.
patent: 6274440 (2001-08-01), Arndt et al.
patent: 6291296 (2001-09-01), Hui et al.
patent: 6300672 (2001-10-01), Lee
patent: 6303525 (2001-10-01), Annapragada
patent: 6362508 (2002-03-01), Rasovsky et al.
patent: 6365015 (2002-04-01), Shan et al.
patent: 6376359 (2002-04-01), Lin et al.
patent: 6433436 (2002-08-01), Feild et al.
patent: 6495877 (2002-12-01), Hsue et al.
patent: 6511923 (2003-01-01), Wang et al.
patent: 6518120 (2003-02-01), Park
patent: 6559004 (2003-05-01), Yang et al.
patent: 6630380 (2003-10-01), Cheng et al.
patent: 6734110 (2004-05-01), Jang et al.
patent: 6831013 (2004-12-01), Tsai et al.
patent: 6841470 (2005-01-01), Wang et al.
patent: 6847077 (2005-01-01), Thomas et al.
patent: 6865107 (2005-03-01), Anthony et al.
patent: 6903022 (2005-06-01), Peng et al.
patent: 6952030 (2005-10-01), Herner et al.
patent: 6956278 (2005-10-01), Herner
patent: 7005375 (2006-02-01), Karthikeyan et al.
patent: 7012336 (2006-03-01), Okura et al.
patent: 7018878 (2006-03-01), Vyvoda et al.
patent: 7018930 (2006-03-01), Lee et al.
patent: 7046545 (2006-05-01), Hosotani
patent: 7148139 (2006-12-01), Jung
patent: 7186625 (2007-03-01), Chudzik et al.
patent: 7208095 (2007-04-01), Kundalgurki
patent: 7250370 (2007-07-01), Chang et al.
patent: 7300866 (2007-11-01), Hong
patent: 7429535 (2008-09-01), Figura et al.
patent: 7439130 (2008-10-01), Park
patent: 7456072 (2008-11-01), Olewine et al.
patent: 7485574 (2009-02-01), Koh
patent: 7504334 (2009-03-01), Park
patent: 7557026 (2009-07-01), Kim et al.
patent: 7723204 (2010-05-01), Khemka et al.
patent: 2001/0051423 (2001-12-01), Kim et al.
patent: 2002/0149085 (2002-10-01), Lin et al.
patent: 2002/0149111 (2002-10-01), Hopper
patent: 2002/0173144 (2002-11-01), Yamamoto
patent: 2002/0177297 (2002-11-01), Cho
patent: 2003/0124854 (2003-07-01), Parker et al.
patent: 2003/0134510 (2003-07-01), Lee et al.
patent: 2003/0176055 (2003-09-01), Wu
patent: 2003/0178666 (2003-09-01), Lee et al.
patent: 2003/0219979 (2003-11-01), Choi et al.
patent: 2004/0046230 (2004-03-01), Bernstein et al.
patent: 2004/0095813 (2004-05-01), Hosotani
patent: 2004/0132284 (2004-07-01), Ko
patent: 2004/0152277 (2004-08-01), Seo
patent: 2004/0178172 (2004-09-01), Huang et al.
patent: 2005/0009333 (2005-01-01), Lee et al.
patent: 2005/0130401 (2005-06-01), Kim
patent: 2006/0038293 (2006-02-01), Rueger et al.
patent: 2006/0068592 (2006-03-01), Dostalik
patent: 2006/0110877 (2006-05-01), Park et al.
patent: 2006/0118907 (2006-06-01), Park
patent: 2006/0134930 (2006-06-01), Jeon
patent: 2006/0141778 (2006-06-01), Tonegawa et al.
patent: 2006/0154417 (2006-07-01), Shinmura et al.
patent: 2006/0154491 (2006-07-01), Xie et al.
patent: 2006/0292774 (2006-12-01), Chen et al.
patent: 2007/0020878 (2007-01-01), Nam
patent: 2007/0023912 (2007-02-01), Wang
patent: 2007/0032035 (2007-02-01), Durcan et al.
patent: 2007/0059925 (2007-03-01), Choi et al.
patent: 2007/0148960 (2007-06-01), Park
patent: 2007/0236981 (2007-10-01), Herner
patent: 2007/0281471 (2007-12-01), Hurwitz et al.
patent: 2008/0096389 (2008-04-01), Feng et al.
patent: 2008/0283960 (2008-11-01), Lerner
patent: 2009/0041076 (2009-02-01), Inoue et al.
patent: 2010/0124817 (2010-05-01), Kim et al.
patent: 10-571401 (2006-04-01), None
patent: 10-2006-006233 (2006-06-01), None
patent: 10-2006-008350 (2006-07-01), None
International Search Report & The Written Opinion of the International Searching Authority, International Application No. PCT/US2008/068499 filed Jun. 27, 2008, Dec. 24, 2008.
Hsia Kang-Jay
Li Calvin K
Petti Christopher J
Richards N Drew
SanDisk Corporation
Singal Ankush k
Vierra Magen Marcus & DeNiro LLP
LandOfFree
Forming complimentary metal features using conformal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Forming complimentary metal features using conformal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming complimentary metal features using conformal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2662835