Forming chemical vapor depositable low dielectric constant...

Details Forming chemical vapor depositable low dielectric constant... Forming chemical vapor depositable low dielectric constant...

2006-04-18

2006-04-18

Stein, Stephen (Department: 1775)

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

C427S255380

Reexamination Certificate

active

07029723

ABSTRACT:
Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

REFERENCES:
patent: 3457222 (1969-07-01), Stelvio
patent: 5290897 (1994-03-01), Dougherty
patent: 5932335 (1999-08-01), Keller et al.
patent: 6318124 (2001-11-01), Rutherford et al.
patent: 6511890 (2003-01-01), Park et al.
patent: 2003/0023118 (2003-01-01), Kanayama et al.
patent: 2614324 (1977-10-01), None
patent: 11001561 (1999-01-01), None
patent: 2001261837 (2001-09-01), None
patent: 493488 (1976-05-01), None
patent: 657039 (1979-04-01), None

Affiliated with

Also associated with

Rating

Forming chemical vapor depositable low dielectric constant... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming chemical vapor depositable low dielectric constant..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming chemical vapor depositable low dielectric constant... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3616907