Forming chan-stops by selectively implanting impurity ions throu

Details Forming chan-stops by selectively implanting impurity ions throu Forming chan-stops by selectively implanting impurity ions throu

1984-03-02

1985-01-22

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 29576W, 148 15, 148187, 357 91, H01L 21265, H01L 2978

Patent

active

044943040

ABSTRACT:
A MOS type semiconductor device is manufactured by forming a polycrystalline silicon gate electrode in an active region of a semiconductor silicon substrate, forming diffused layers in the substrate, the diffused layers being of a conductivity type opposite to that of the substrate, forming a relatively thick oxide film on the polycrystalline silicon gate electrode, depositing on the oxide film, a silicon nitride film, another oxide film, and a resin film to a thickness smaller than that of the relatively thick oxide film, forming channel stop layers and exposing the polycrystalline silicon film on the diffused layers to form electrode.

REFERENCES:
patent: 4140547 (1979-02-01), Shibata
patent: 4354309 (1982-10-01), Gardiner et al.
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4406049 (1983-09-01), Tam et al.
patent: 4441941 (1984-04-01), Nozawa
patent: 4444605 (1984-04-01), Slawinski
patent: 4455193 (1984-06-01), Jeuch

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