Forming carbon nanotubes at lower temperatures suitable for...

Details Forming carbon nanotubes at lower temperatures suitable for... Forming carbon nanotubes at lower temperatures suitable for...

2007-02-13

2007-02-13

Santiago, Mariceli (Department: 2879)

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

C445S051000, C423S447100, C423S447300, C423S447400

Reexamination Certificate

active

10600226

ABSTRACT:
An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300° C. to 500° C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.

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Search Report PCT/US03/26314.

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