Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-07-07
1995-11-21
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257 77, 257183, 257187, 257351, 257359, 257521, H01L 4900, H01L 29161, H01L 2701, H01L 2908
Patent
active
054689783
ABSTRACT:
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film has a suitable band gap energy. Boron carbides such as B.sub.4.7 C, B.sub.7.2 C and B.sub.19 C have suitable band gap energies between 0.8 and 1.7 eV. The stoichiometry of the film can be selected by varying the partial pressure of precursor gases, such as nido pentaborane and methane. The precursor gas or gases are energized, e.g., in a plasma reactor. The heterojunction diodes retain good rectifying properties at elevated temperature, e.g., up to 400.degree. C.
REFERENCES:
patent: 4957773 (1990-09-01), Spencer et al.
patent: 4980198 (1990-12-01), Dowben et al.
patent: 5164805 (1992-11-01), Lee
Sunwoo Lee et al., Characterization of Boron Carbide Thin Films Fabricated by Plasma, etc., Nov. 1992.
Sunwoo Lee et al., Conductance in Microcrystalline B.sub.1-x C.sub.x /Si Heterojunction Diodes.
Sunwoo Lee, The Properties of Boron Carbide/Silicon Heterojunction Diodes Fabricated by Plasma-Enhanced.
Hille Rolf
Martin Wallace Valencia
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