Forming an intermediate electrode between an ovonic...

Details Forming an intermediate electrode between an ovonic... Forming an intermediate electrode between an ovonic...

2009-03-31

2009-12-29

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S095000

Reexamination Certificate

active

07638789

ABSTRACT:
An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.

REFERENCES:
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 6420725 (2002-07-01), Harshfield

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