Forming an IC chip with buried zener diode

Details Forming an IC chip with buried zener diode Forming an IC chip with buried zener diode

1978-10-05

1980-07-22

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148189, 357 13, 357 89, 357 90, H01L 744

Patent

active

042138060

ABSTRACT:
An IC chip having a Zener diode with a subsurface breakdown junction to assure stable operation. The diode is formed by a triple diffusion process compatible with conventional bipolar processing. A deep p.sup.++ diffusion first is applied, reaching through the epitaxial region to the buried n.sup.+ layer; next, a shallow p.sup.+ diffusion is formed over the deep p.sup.++ diffusion and extending laterally beyond that diffusion; finally, a shallow n.sup.+ diffusion is applied over the p diffusions, to form a subsurface breakdown junction therewith. The topology of the mask windows is selected to provide concentration profiles which insure that the breakdown occurs at the subsurface junction, and that other desirable diode characteristics are achieved.

REFERENCES:
patent: 3378915 (1968-04-01), Zenner
patent: 3765961 (1973-10-01), Mar
patent: 3881179 (1975-04-01), Howard
patent: 3886001 (1975-05-01), Dobkin
patent: 4099998 (1978-07-01), Ferro et al.
patent: 4136349 (1979-01-01), Tsang

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