Forming an aluminum alloy oxynitride underlayer and a...

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Reexamination Certificate

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C360S235200, C427S130000, C427S249700, C427S530000, C427S532000, C427S551000, C427S553000, C204S157410, C204S157430, C204S157440, C204S192110, C029S603130

Reexamination Certificate

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08009387

ABSTRACT:
A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlOxNyor MezAlOxNywhere Mezsymbolizes Tiz, Sizor Crzand where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.

REFERENCES:
patent: 4861669 (1989-08-01), Gillery
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5070036 (1991-12-01), Stevens
patent: 5227196 (1993-07-01), Itoh
patent: 5609948 (1997-03-01), David et al.
patent: 6238803 (2001-05-01), Fu et al.
patent: 6296742 (2001-10-01), Kouznetsov
patent: 6517956 (2003-02-01), Chen
patent: 6569295 (2003-05-01), Hwang et al.
patent: 6915796 (2005-07-01), Sung
patent: 7091541 (2006-08-01), Natsume et al.
patent: 7097745 (2006-08-01), Hoehn et al.
patent: 7300556 (2007-11-01), Hwang et al.
patent: 7465378 (2008-12-01), Nyberg et al.
patent: 7722968 (2010-05-01), Ishiyama
patent: 19730884 (1999-01-01), None
patent: 2182880 (1990-07-01), None
patent: 2215522 (1990-08-01), None
patent: 3195301 (1991-08-01), None
patent: 4235283 (1992-08-01), None
patent: 11268164 (1999-10-01), None
Y. Liu et al., “Effects of mechanical stress on the resistance of TMR devices,”, Journal of Magnetism and Magnetic Materials (2006), doi: 10.1016/j.jmmm.2006.10.969, 3 pages.
“Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion-assisted deposition,” by R. P. Netterfield et al., Journal of Applied Physics vol. 63, No. 3, Feb. 1, 1988, pp. 760-769, 1988 American Institute of Physics.
“Reactive ion assisted deposition of aluminum oxynitride thin films,” by Chang Kwon Hwangbo et al., Jul. 15, 1989, vol. 28, No. 14, Applied Optics, pp. 2779-2784.
“Reaction of N2 beams with aluminum surfaces,” by J. Ahley Taylor et al., Journal of Che. Phys. Vol. 75, No. 4, Aug. 14, 1981, pp. 1735-1745, 1981 American Institute of Physics.
“Control of reactive sputtering processes,” by W.D. Sproul et al., Thin Solid Films 491 (2005) 1-17, 2005 Elsevier B. V., doi: 10.1016/j.tsf.2005.02.022.
Handbook of Plasma Immersion Ion Implantation and Deposition, Edited by Andre Anders, Copyright 2000, John Wiley & Sons, Inc. NY, 20 pages.

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