Forming adjacent impurity regions in a semiconductor by oxide ma

Details Forming adjacent impurity regions in a semiconductor by oxide ma Forming adjacent impurity regions in a semiconductor by oxide ma

1978-06-30

1979-04-24

Ozaki, G.

Metal treatment

Compositions

Heat treating

29571, 148187, 148188, H01L 2126, H01L 21225

Patent

active

041510100

ABSTRACT:
A method for forming adjacent impurity regions of differing conductivities in a semiconductor substrate without using lithography. N type impurities of a first conductivity are introduced into the substrate to form first impurity regions. The substrate is then oxidized to create a mask having a thickness which is greater over the N type impurity regions than over the remainder of the substrate. A portion of the masking layer is then removed, preferably by dip-etching, to a depth which is sufficient to re-expose the substrate only. Impurities of a second conductivity are then introduced in the substrate adjacent the N type impurity regions, with the remaining portion of the mask protecting the N type impurity regions from introduction of the second impurities therein.

REFERENCES:
patent: RE28653 (1975-12-01), Murphy
patent: 3398029 (1968-08-01), Yasufuku et al.
patent: 3771218 (1973-11-01), Langdon
patent: 3880682 (1975-04-01), Muller
patent: 3886004 (1975-05-01), Bruchez
patent: 3899372 (1975-08-01), Esch et al.
patent: 3910804 (1975-10-01), Alcott
patent: 3928082 (1975-12-01), Schwettmann et al.
patent: 3986896 (1976-10-01), Veno et al.
patent: 4049477 (1977-09-01), Ligon
patent: 4062699 (1977-12-01), Armstrong
Chappelow et al., IBM TDB, vol. 16, No. 5, Oct. 1973, pp. 1617, 1617 A.
Hornung et al., IBM TDB, vol. 17, No. 1, Jun. 1974, pp. 115 and 116.
Lee, IBM TDB, vol. 20, No. 6, Nov. 1977, pp. 2233 and 2234.
Mueller et al., IBM TDB, vol. 19, No. 13, Aug. 1976, p. 865-866.

Affiliated with

Also associated with

Rating

Forming adjacent impurity regions in a semiconductor by oxide ma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming adjacent impurity regions in a semiconductor by oxide ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming adjacent impurity regions in a semiconductor by oxide ma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1989671