Forming a vertical PNP transistor

Details Forming a vertical PNP transistor Forming a vertical PNP transistor

1992-03-02

1994-04-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 74, 257 37, H01L 21265, H01L 2970

Patent

active

053025342

ABSTRACT:
A transistor (10) is formed by utilizing an isolated well (18) within a thin epitaxial layer (14). A base mask (22) that has a base opening (23) is applied to expose a portion of the isolated well (18). A low resistance collector enhancement (24) is formed within the well (18) by doping a portion of the well (18) through the base opening (23). A base region (26) is formed overlying the collector enhancement (24) by doping the well (18) through the base opening (23). Forming the collector enhancement (24) through the base opening (23), facilitates providing the collector enhancement (24) with a small area thereby minimizing the transistor's (10) parasitic collector capacitance value, collector resistance, and transit time.

REFERENCES:
patent: 4543707 (1985-10-01), Ito et al.
patent: 4939099 (1990-07-01), Seacrist et al.
patent: 4996581 (1991-02-01), Hamasaki
patent: 5010026 (1991-04-01), Gomi
patent: 5087579 (1992-02-01), Tomassetti
patent: 5091322 (1992-02-01), Maeda
patent: 5183768 (1983-02-01), Kameyama et al.
patent: 5200347 (1993-04-01), Wang et al.
D. de Lang et al., "Integration of Vertical PNP Transistors in . . . ", IEEE Bipolar Circuits and Tech. Meeting, pp. 190-193, (1989).
Pong-Fei Lu et al, "Stimulations of Collector Resistance of PNP . . . ", Solid State Electronics, vol. 32, No. 8, pp. 675-678, (1989).
K. Higashitani et al. "A Novel CBi-CMOS Tech. by DIIP . . . ", IE.sup.3 Symposium on VISI Tech., pp. 77-78, (1990).

Affiliated with

Also associated with

Rating

Forming a vertical PNP transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming a vertical PNP transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming a vertical PNP transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2098246