Forming a type I heterostructure in a group IV semiconductor

Details Forming a type I heterostructure in a group IV semiconductor Forming a type I heterostructure in a group IV semiconductor

2007-03-27

2008-10-14

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S019000, C257S194000, C257SE29069, C257SE29072

Reexamination Certificate

active

07435987

ABSTRACT:
In one embodiment, the present invention includes a method for forming a transistor that includes forming a first buffer layer of silicon germanium tin (SiGe(Sn)) on a silicon (Si) substrate, forming a barrier layer on the first buffer layer, the barrier layer comprising silicon germanium (Si1−xGex), and forming a quantum well (QW) layer on the barrier layer including a lower QW barrier layer formed of silicon germanium carbon (Si1−yGey(C)), a strained QW channel layer formed of germanium on the lower QW layer, and an upper QW barrier layer on the strained QW channel layer formed of Si1−zGez(C). Other embodiments are described and claimed.

REFERENCES:
patent: 6891869 (2005-05-01), Augusto
patent: 2006/0148182 (2006-07-01), Datta et al.
patent: 2006/0237801 (2006-10-01), Kavalieros et al.
U.S. Appl. No. 11/529,963, Filed Sep. 29, 2006, entitled, “Methods For Uniform Doping Of Non-Planar Transistor Structures,” by Brian Doyle, et al.
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Jack Kavalieros, et al., “Tri-Gate Transistor Architecture With High-k Gate Dielectrics, Metal Gates and Strain Engineering,” Jun. 2006, pp. 1-2.
Yu-Hsuan Kuo, et al., “Strong Quantum-Confined Stark Effect In Germanium Quantum-Well Structures On Silicon,” Oct. 2005, pp. 1334-1336.
Minjoo L. Lee, et al., “Strained Si, SiGe, And Ge Channels For High-Mobility Metal-Oxide-Semiconductor Field-Effect Transistors,” Dec. 2004, pp. 1-27.
Minjoo L. Lee, et al., “Strained Si/strained Ge Dual-Channel Heterostructures On Relaxed Si0.5Ge0.5for Symmetric Mobility p-Type and n-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” Sep. 2003, pp. 4202-4204.

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