Forming a trench capacitor

Details Forming a trench capacitor Forming a trench capacitor

1987-02-10

1988-08-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437156, 29 2542, 357 236, H01L 2993

Patent

active

047613858

ABSTRACT:
A trench capacitor having increased capacitance. By means of the oxidation enhanced diffusion (OED) effect, locally outdiffused regions in the doped substrate of a semiconductor material may be formed. Thus, greater capacitance can be achieved for a trench capacitor of equal depth. This technique avoids the heretofore required extra doping in the well of opposite conductivity type that would have been necessary to prevent punchthrough if the entire lower, heavily doped region or substrate had to be formed closer to the surface of the overlying lightly doped semiconductor layer. The locally outdiffused regions may be accomplished by standard oxidation techniques.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
R. B. Fair, "Impurity Diffusion and Oxidation of Silicon," Silicon Integrated Circuits, Part B, Raymond Wolfe, ed., Academic Press, 1981, pp. 91-108.
M. Sakamoto, et al., "Buried Storage Electrode (BSE) Cell for Megabit DRAMS," IEDM 1985 Digest, Dec. 1985, pp. 710-713.

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