Forming a transition metal silicide radiation detector and sourc

Details Forming a transition metal silicide radiation detector and sourc Forming a transition metal silicide radiation detector and sourc

1988-04-05

1990-04-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 3, 437 5, 437178, 437 51, 437200, 148DIG147, 148DIG139, H01L 2948

Patent

active

049140426

ABSTRACT:
Transition metal silicide semiconductor electromagnetic radiation source and detectors have a thin film of semiconducting silicide grown or deposited on a silicon wafer. The transition metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhenium, barium, calcium, magnesium and osmium. The detectors are intrinsic and can be formed either as discrete devices, monolithically or in array on a silicon chip to provide an integrated detector. The transition metal silicide semiconductors are efficient detectors at wavelengths which mate with the transmission capabilities of certain optical fibers enhancing the combination of infra-red detectors and optical fiber transmission previously unknown. Iron disilicide is useful as an infra-red radiation source and as an extrinsic detector as well.

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