Forming a thin film structure

Details Forming a thin film structure Forming a thin film structure

2003-10-24

2008-09-09

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S248100, C427S255230

Reexamination Certificate

active

07422770

ABSTRACT:
A method and apparatus of forming a microcrystalline thin film comprises supplying a first gas and a second gas into a chamber containing a substrate during a first process, and supplying the second gas but not the first gas into the chamber during a second process. The first and second processes are performed plural times to form the microcrystalline thin film.

REFERENCES:
patent: 5242530 (1993-09-01), Batey et al.
patent: 5686349 (1997-11-01), Nakata
patent: 6271062 (2001-08-01), Nakata et al.
patent: 6329270 (2001-12-01), Voutsas
patent: 6833161 (2004-12-01), Wang et al.
patent: 6919266 (2005-07-01), Ahn et al.
patent: 4-266019 (1992-09-01), None
patent: 6-181313 (1994-06-01), None
A.P. Constant et al., “Thin Film Transistors Based on Microcrystalline Silicon on Polyimide Substrates,” Materials Research Society Symp. Proc., vol. 557, pp. 683-688, (1999).

Affiliated with

Also associated with

Rating

Forming a thin film structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming a thin film structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming a thin film structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3968725