Forming a silicon nitride film

Details Forming a silicon nitride film Forming a silicon nitride film

2004-01-23

2008-12-30

Meeks, Timothy H (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255180, C427S255280, C427S248100, C427S255230

Reexamination Certificate

active

07470450

ABSTRACT:
A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500° C., or less.

REFERENCES:
patent: 4720532 (1988-01-01), Seyferth et al.
patent: 5041303 (1991-08-01), Wertheimer et al.
patent: 2002/0016084 (2002-02-01), Todd
patent: 2006/0228903 (2006-10-01), McSwiney et al.
Bao et al. “Polycyclodisilazane: a new polymeric precursor for silicon nitride-based ceramics” Journal of Materials Chemistry, 2000, 10, 395-401.
Scarlete et al. “Poly(methylsilane) and Poly(Hydrazinomethylsilane) as precursors for silicon containing ceramics”, NATO ASI Series, Series E: Applied Science (1995) 125-140.
Inventors: Michael L. McSwiney and Michael D. Goodner, Patent Application entitled:Low-Temperature Silicon Nitride Deposition, filed Jul. 30, 2003, U.S. Appl. No. 10/631,627, Patent Application has 15 pages and 4 pages of drawings.
Author: Schumacher, A Unit of Air Products and Chemicals, Inc.; entitled:BTBAS Silicon Nitride; 1 page; www.schumacher.com/btbas, date unknown.

Affiliated with

Also associated with

Rating

Forming a silicon nitride film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming a silicon nitride film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming a silicon nitride film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4027787