Forming a semiconductor layer using molecular beam epitaxy

Details Forming a semiconductor layer using molecular beam epitaxy Forming a semiconductor layer using molecular beam epitaxy

1990-06-28

1992-12-08

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 82, 437105, 437106, 437107, 437108, 437110, 437126, 437247, 148 33, 148 334, 156611, 156613, 156614, H01L 2120, H01L 21203

Patent

active

051697980

ABSTRACT:
Disclosed is a method of making a semiconductor device that comprises MBE at substrate temperatures substantially lower than conventionally used temperatures. A significant aspect of the method is the ability to produce highly doped (e.g., 10.sup.19 cm.sup.-3) epitaxial single crystal Si layers. The deposition can be carried out such that substantially all (at least 90%) dopant atoms are electrically active at 20.degree. C. However, the method is not limited to Si MBE. Exemplarily, the method can be used to produce epitaxial single crystal GaAs having very short (e.g., <100ps) carrier lifetime. Such material can be useful for, e.g., high speed photodetectors. Incorporation into the method of a relatively low temperature rapid thermal anneal makes possible low temperature MBE growth of relatively thick semiconductor layers.

REFERENCES:
patent: 4774205 (1988-09-01), Choi et al.
patent: 4806502 (1989-02-01), Jorke et al.
patent: 4835116 (1989-05-01), Lee et al.
patent: 4843028 (1989-06-01), Herzog et al.
patent: 4952527 (1990-08-01), Calawa et al.
Nishi et al., "Growth of Single Domain GaAs on 2-inch Si (100) . . . ", Jpn. J. Appl. Phys., vol. 24, No. 6, Jun. 1985, pp. L391-L393.
Chang et al., "Growth of High Quality GaAs Layers Directly on Si . . . ", J. Vac. Sci. Technol., B5 (3), May/Jun. 1987, pp. 815-818.
"Kinetics of Ordered Growth of Si on Si(100) at Low Temperatures", by H. Jorke et al., Phys. Rev. B, vol. 40, 1989.
"Low Temperature Kinetics of Si(100) MBE Growth", by H. Jorke et al., Thin Solid Films, 183(1989), pp. 307-313.
"Properties of Si Layers Grown by Molecular Beam Epitaxy at Very Low Temperatures", by H. Jorke et al., Applied Physics Letters, 54(9), Feb. 27, 1989, pp. 819-821.
"Gallium Doping of Silicon Molecular Beam Epitaxial Layers at Low Temperatures and Under Si.sup.+ Ion Bombardment", by F. Schaffler et al., Thin Solid Films, 184 (1990), pp. 75-83.
"Picosecond GaAs-based Photoconductive Optoelectronic Detectors", by F. W. Smith et al., Applied Physics Letters, 54 (10), Mar. 6, 1989, pp. 890-892.
"New MBE Buffer for Micron and Quarter-Micron Gate GaAs MESFET's", by F. W. Smith et al., 1987 IEEE, pp. 229-233.
"Growth and Characterization of Atomic Layer Doping Structures in Si", by A. A. Van Gorkum et al., Journal of Applied Physics, 65 (6), Mar. 15, 1989, pp. 2485-2492.
"Atomic Layer Doped Field-Effect Transistor Fabricated using Si Molecular Beam Epitaxy", by K. Nakagawa et al., Applied Physics Letters, 54 (19), May 8, 1989, pp. 1869-1871.
"Silicon Molecular Beam Epitaxy", by Y. Shiraki, Journal of Vacuum Science & Technology B, vol. 3, No. 2, Mar. 1985, pp. 725-729.
"Electrical Properties of Si(100) Films Doped with Low-Energy (<150 eV)Sb Ions During Growth by Molecular Beam Epitaxy", by P. Fons et al., Applied Physics Letters, vol. 53, No. 18, Oct. 31, 1988, pp. 1732-1734.
"Very Low Temperature Growth and Doping of Silicon MBE Layers", by H. Jorke et al., Journal of Crystal Growth, vol. 95, No. 1-4, Feb. 1989, Amsterdam NL, pp. 484-485.
"Reduction of Dislocation Density of MBE-Grown Si.sub.1-x Ge.sub.x Layers on (100) Si by Rapid Thermal Annealing", by B. Hollander et al., Thin Solid Films, vol. 183, No. 1, Dec. 30, 1989, Lausanne CH, pp. 157-164.
"Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE", by A. Ishizaka et al., Journal of the Electrochemical Society, vol. 133, No. 4, Apr. 1986, Manchester, N.H., U.S., pp. 666-671.
"P-Type Delta Doping in Silicon MBE", by N. L. Mattey et al., Thin Solid Films, vol. 184, No. 1, Jan. 1990, Lausanne CH, pp. 15-90.
"Sn Incorporation in GaAs by Molecular Beam Epitaxy", by H. Ito et al., Japanese Journal of Applied Physics, Part 2: Letters, vol. 26, No. 11, Nov. 1987, Tokyo JP, pp. 1760-1762.
"Heavily Si-Doped GaAs and AlAs
-GaAs Superlattice Grown by Molecular Beam Epitaxy", by M. Ogawa et al., Japanese Journal of Applied Physics, vol. 24, No. 8, Aug. 1985, Tokyo JP, pp. 572-574.

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