Forming a semiconductor device feature using acquired...

Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S492100, C250S492200, C250S492210, C250S492220, C438S712000, C438S713000, C438S714000

Reexamination Certificate

active

07554108

ABSTRACT:
In one embodiment, a controller coupled to a focused ion beam tool can execute instructions to acquire parameters for a feature of a semiconductor device, determine a data array using the parameters, and cause the focused ion beam tool to perform tool iterations to form the feature on the semiconductor device using the data array. Other embodiments are described and claimed.

REFERENCES:
patent: 5253182 (1993-10-01), Suzuki
patent: 5843846 (1998-12-01), Nguyen et al.
patent: 5936304 (1999-08-01), Lii et al.
patent: 6031229 (2000-02-01), Keckley et al.
patent: 6245587 (2001-06-01), Vallett
patent: 6323499 (2001-11-01), Muraki et al.
patent: 6388253 (2002-05-01), Su
patent: 6393604 (2002-05-01), Yamada et al.
patent: 6432798 (2002-08-01), Liu et al.
patent: 6509276 (2003-01-01), Scott
patent: 6592728 (2003-07-01), Paranjpe et al.
patent: 6630681 (2003-10-01), Kojima
patent: 6633831 (2003-10-01), Nikoonahad et al.
patent: 6649919 (2003-11-01), Chao et al.
patent: 6787784 (2004-09-01), Okunuki
patent: 6909930 (2005-06-01), Shishido et al.
patent: 7081369 (2006-07-01), Scott et al.
patent: 7160475 (2007-01-01), Scipioni
patent: 2002/0151182 (2002-10-01), Scott
Disclosure Of Information Pursuant To M.P.E.P. §§ Apr. 2002 and Jun. 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Forming a semiconductor device feature using acquired... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming a semiconductor device feature using acquired..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming a semiconductor device feature using acquired... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4082828

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.