Forming a semiconductor device feature using acquired...

Details Forming a semiconductor device feature using acquired... Forming a semiconductor device feature using acquired...

2006-05-03

2009-06-30

Vanore, David A (Department: 2881)

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

C250S492100, C250S492200, C250S492210, C250S492220, C438S712000, C438S713000, C438S714000

Reexamination Certificate

active

07554108

ABSTRACT:
In one embodiment, a controller coupled to a focused ion beam tool can execute instructions to acquire parameters for a feature of a semiconductor device, determine a data array using the parameters, and cause the focused ion beam tool to perform tool iterations to form the feature on the semiconductor device using the data array. Other embodiments are described and claimed.

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Disclosure Of Information Pursuant To M.P.E.P. §§ Apr. 2002 and Jun. 2001.

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