Forming a self-aligned epitaxial base bipolar transistor

Details Forming a self-aligned epitaxial base bipolar transistor Forming a self-aligned epitaxial base bipolar transistor

1998-03-13

2000-02-01

Fahmy, Wael

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Using epitaxial lateral overgrowth

438349, 438350, 438366, 438363, H01L 21331

Patent

active

060202467

ABSTRACT:
An improved method and an apparatus for forming a self-aligned epitaxial base bipolar transistor in a semiconductor material is disclosed. The method of the invention involves forming an intrinsic base region formed by growing an epitaxial semiconductor material over a collector region. A raised sacrificial emitter core is then formed on the intrinsic base region followed by depositing a substantially conformal spacer layer over the sacrificial emitter core. Next, the spacer material is anisotropically etched such that a protective spacer ring is formed about the sacrificial emitter core. An extrinsic base is then formed by implanting dopant into the epitaxial base region wherein the sacrificial emitter core and the spacer ring preserve an emitter region. The spacer ring also serves to self-align the extrinsic base region to the emitter region. The protective sacrificial emitter core and spacer ring are then removed. The self-aligned epitaxial base bipolar transistor is then formed by doping the emitter region.

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Harame, D.L., et al., Si/SiGe Epitaxial-Base Transistors-Part II: Process Integration and Analog Applications, IEEE Transactions on Electron Devices, vol. 42, No. 3, Mar. 1995, pp. 469-482.

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